June 18, 2025

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers.

Unfortunately, the high cost of gallium nitride (GaN) and the specialization required to incorporate this semiconductor material into conventional electronics have limited its use in commercial applications.

Now, researchers from MIT and elsewhere have developed a new fabrication process that integrates high-performance GaN transistors onto standard silicon CMOS chips in a way that is low-cost and scalable, and compatible with existing semiconductor foundries.

Complete article from MIT News.